document number: 93053 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 scr/scr and scr/diode (magn-a-pak power modules), 230 a vsk.230..pbf series vishay semiconductors features ? high voltage ? electrically isolated base plate ? 3500 v rms isolating voltage ? industrial standard package ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description this new vsk series of ma gn-a-pak modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblie s to be built. they can be interconnected to form single phase or three phase bridges or as ac-switches when modules are connected in anti-parallel mode. these modules are intended for general purpose applications such as battery chargers, welders, motor drives, ups, etc. electrical specifications product summary i t(av) 230 a magn-a-pak major ratings and characteristics symbol characteristics values units i t(av) 85 c 230 a i t(rms) 510 i tsm 50 hz 7500 60 hz 7850 i 2 t 50 hz 280 ka 2 s 60 hz 260 i 2 t 280 ka 2 s v drm /v rrm up to 2000 v t j range - 40 to 130 c voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse and off-state blocking voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 130 c maximum ma vsk.230- 08 800 900 50 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93053 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.230..pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 230 a on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 230 a 85 c maximum rms on-state current i t(rms) as ac switch 510 a maximum peak, one-cycle on-state non-repetitive, surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 7500 t = 8.3 ms 7850 t = 10 ms 100 % v rrm reapplied 6300 t = 8.3 ms 6600 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 280 ka 2 s t = 8.3 ms 256 t = 10 ms 100 % v rrm reapplied 198 t = 8.3 ms 181 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 2800 ka 2 s low level value or threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 1.03 v high level value of threshold voltage v t(to)2 (i > x i t(av) < i < x i t(av) ), t j = t j maximum 1.07 low level value on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.77 m high level value on-state slope resistance r t2 (i > x i t(av) < i < x i t(av) ), t j = t j maximum 0.73 maximum on-state voltage drop v tm i tm = x i t(av) , t j = t j maximum, 180 conduction, average power = v t(to) x i t(av) + r f x (i t(rms) ) 2 1.59 v maximum holding current i h anode supply = 12 v, initial i t = 30 a, t j = 25 c 500 ma maximum latching current i l anode supply = 12 v, resistive load = 1 , gate pulse: 10 v, 100 s, t j = 25 c 1000 switching parameter symbol test conditions values units typical delay time t d t j = 25 c, gate current = 1 a di g /dt = 1 a/s v d = 0.67 % v drm 1.0 s typical rise time t r 2.0 typical turn-off time t q i tm = 300 a; di/dt = 15 a/s; t j = t j maximum; v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 50 to 150 blocking parameter symbol test conditions values units maximum peak reverse and off-state leakage current i rrm, i drm t j = t j maximum 50 ma rms insulation voltage v ins 50 hz, circuit to base, all term inals shorted, 25 c, 1 s 3000 v critical rate of rise of off-state voltage dv/dt t j = t j maximum, exponential to 67 % rated v drm 1000 v/s
document number: 93053 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vsk.230..pbf series scr/scr and scr/diode (magn-a-pak power modules), 230 a vishay semiconductors note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t p 5 ms, t j = t j maximum 10.0 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 2.0 maximum peak gate current + i gm t p 5 ms, t j = t j maximum 3.0 a maximum peak negative gate voltage - v gt t p 5 ms, t j = t j maximum 5.0 v maximum required dc ga te voltage to trigger v gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 4.0 t j = 25 c 3.0 t j = t j maximum 2.0 maximum required dc ga te current to trigger i gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 350 ma t j = 25 c 200 t j = t j maximum 100 maximum gate voltage th at will not trigger v gd t j = t j maximum, rated v drm applied 0.25 v maximum gate current that willnot trigger i gd t j = t j maximum, rated v drm applied 10.0 ma maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, rated v drm applied 500 a/s thermal and mechanical specifications parameter symbol test co nditions values units junction operating temperature range t j - 40 to 130 c storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.125 k/w typical thermal resistance, case to heatsink per module r thcs mounting surface flat, smooth and greased 0.02 mounting torque 10 % map to heatsink a mounting compound is recommended and the torque should be rechecked after a period of about 3 h to allow for the spread of the compound. 4 to 6 nm busbar to map approximate weight 500 g 17.8 oz. case style magn-a-pak r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vsk.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 k/w
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93053 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.230..pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 230 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current
document number: 93053 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vsk.230..pbf series scr/scr and scr/diode (magn-a-pak power modules), 230 a vishay semiconductors fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93053 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.230..pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 230 a fig. 10 - on-state voltage drop characteristics fig. 11 - reverse recovery charge characteristics fig. 12 - gate characteristics fig. 13 - thermal impedance z thjc characteristics 200 400 600 800 1000 1200 1400 1600 1800 0 102030405060708090100 rate of fall of on-state current - di/dt (a/s) typical reverse recovery charge - qrr (c) i tm = 800 a 500 a 300 a 200 a 100 a vsk. 230 .. series t j = 130 c per junction 50 a 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rated di/dt : 20 v, 10 ohms; tr < =1s tr<=1 s rectangular gate pulse <=30% rated di/dt : 10v, 20ohms (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms vsk.230 series frequency limited by pg(av) (1) (4) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thjc steady state value: r = 0.125 k/w (dc operation) thjc transient thermal impedance z (k/w) vsk.230.. series
document number: 93053 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vsk.230..pbf series scr/scr and scr/diode (magn-a-pak power modules), 230 a vishay semiconductors ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration links to related documents dimensions www.vishay.com/doc?95086 1 - module type 2 - circuit configuration (see dimensions - link at the end of datasheet) 3 - current rating 4 - voltage code x 100 = v rrm (see voltage ratings table) device code 5 13 24 vsk t 230 - 20 pbf - none = standard production pbf = lead (pb)-free 5 vskt... + - ~ ~ + - k1g1 g2k2 vskh... + - ~ ~ + - k1g1 vskl... + - ~ ~ + - vskv... + + - - + + k1 g1 g2 k2 - - + + - - g2 k 2 vskk... available 800 v; contact factory for different requirements.
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
